NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a continuous collector current of 5A, a collector-emitter breakdown voltage of 10V, and a maximum power dissipation of 2.5W. Operates with a gain bandwidth product of 150MHz and a collector-emitter saturation voltage of 350mV. Packaged in a 4-pin SOT-223, this RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
Frequency150MHz
PackageSOT-223
Voltage25V
Current5A
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Technical Specifications
Diodes FZT1047ATA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
35V
Collector Emitter Breakdown Voltage
10V
Collector Emitter Saturation Voltage
350mV
Collector Emitter Voltage (VCEO)
10V
Collector-emitter Voltage-Max
350mV
Continuous Collector Current
5A
Current
5A
Current Rating
5A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
10V
Max Collector Current
5A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2.5W
RoHS Compliant
Yes
Transition Frequency
150MHz
Voltage
25V
DC Rated Voltage
10V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT1047ATA Datasheet
Download the complete datasheet for Diodes FZT1047ATA to view detailed technical specifications.
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