NPN Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a continuous collector current of 5A, a collector-emitter breakdown voltage of 17.5V, and a transition frequency of 150MHz. Housed in a SOT-223 package with 4 pins, this component offers a maximum power dissipation of 2.5W and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
Diodes FZT1048ATA technical specifications.
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