NPN Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a continuous collector current of 5A, a collector-emitter breakdown voltage of 25V, and a maximum power dissipation of 2.5W. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 180MHz. Packaged in a SOT-223 case with tape and reel availability. RoHS compliant and lead-free.
Frequency180MHz
PackageSOT-223
Current Rating5A
MountingSurface Mount
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Technical Specifications
Diodes FZT1049ATA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
330mV
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
330mV
Continuous Collector Current
5A
Current Rating
5A
Emitter Base Voltage (VEBO)
5V
Frequency
180MHz
Gain Bandwidth Product
180MHz
Height
1.65mm
hFE Min
300
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
25V
Max Collector Current
5A
Max Frequency
180MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2.5W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
180MHz
DC Rated Voltage
30V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT1049ATA Datasheet
Download the complete datasheet for Diodes FZT1049ATA to view detailed technical specifications.
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