NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 5A continuous collector current, 40V collector-emitter breakdown voltage, and 150V collector-base voltage. Operates with a 155MHz gain bandwidth product and a maximum power dissipation of 2.5W. Packaged in a 4-pin SOT-223, this RoHS and REACH SVHC compliant component offers a wide operating temperature range from -55°C to 150°C.
Frequency155MHz
PackageSOT-223
Current Rating5A
MountingSurface Mount
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Technical Specifications
Diodes FZT1051ATA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
340mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
340mV
Continuous Collector Current
5A
Current Rating
5A
Emitter Base Voltage (VEBO)
5V
Frequency
155MHz
Gain Bandwidth Product
155MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
40V
Max Collector Current
5A
Max Frequency
155MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2.5W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
155MHz
DC Rated Voltage
60V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT1051ATA Datasheet
Download the complete datasheet for Diodes FZT1051ATA to view detailed technical specifications.
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