
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a continuous collector current of -4A, collector-emitter breakdown voltage of 25V, and a transition frequency of 135MHz. This 1-element transistor is housed in a SOT-223 package, offering a maximum power dissipation of 2.5W and operating temperature range of -55°C to 150°C. Compliant with RoHS and REACH SVHC standards.
Diodes FZT1149ATA technical specifications.
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