PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a continuous collector current of -4A, collector-emitter breakdown voltage of 25V, and a transition frequency of 135MHz. This 1-element transistor is housed in a SOT-223 package, offering a maximum power dissipation of 2.5W and operating temperature range of -55°C to 150°C. Compliant with RoHS and REACH SVHC standards.
Frequency135MHz
PackageSOT-223
Voltage25V
Current4A
Quick Jump:
Technical Specifications
Diodes FZT1149ATA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
-230mV
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
350mV
Continuous Collector Current
-4A
Current
4A
Current Rating
-4A
Emitter Base Voltage (VEBO)
5V
Frequency
135MHz
Gain Bandwidth Product
135MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
25V
Max Collector Current
4A
Max Frequency
135MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2.5W
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
135MHz
Voltage
25V
DC Rated Voltage
-25V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT1149ATA Datasheet
Download the complete datasheet for Diodes FZT1149ATA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
