NPN silicon bipolar junction transistor for surface mount applications. Features a 1A continuous collector current, 100V collector-emitter breakdown voltage, and 150MHz transition frequency. Maximum power dissipation is 2W, with a collector-emitter saturation voltage of 600mV. Packaged in SOT-223, this lead-free component operates from -55°C to 150°C and is RoHS compliant.
Frequency150MHz
PackageSOT-223
Current Rating1A
MountingSurface Mount
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Technical Specifications
Diodes FZT493TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
600mV
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
100V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
100V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT493TA Datasheet
Download the complete datasheet for Diodes FZT493TA to view detailed technical specifications.
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