NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 60V collector-emitter breakdown voltage (VCEO) and 3A continuous collector current (IC). Offers a 175MHz transition frequency and a minimum hFE of 100. Packaged in SOT-223 with a 2W power dissipation. RoHS compliant and lead-free.
Frequency175MHz
PackageSOT-223
Voltage60V
Current3A
Quick Jump:
Technical Specifications
Diodes FZT651TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
430mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
600mV
Continuous Collector Current
3A
Current
3A
Current Rating
3A
Emitter Base Voltage (VEBO)
5V
Frequency
175MHz
Gain Bandwidth Product
175MHz
Height
1.65mm
hFE Min
100
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
60V
Max Collector Current
3A
Max Frequency
175MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
175MHz
Voltage
60V
DC Rated Voltage
60V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT651TA Datasheet
Download the complete datasheet for Diodes FZT651TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
