
NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 60V collector-emitter breakdown voltage (VCEO) and 3A continuous collector current (IC). Offers a 175MHz transition frequency and a minimum hFE of 100. Packaged in SOT-223 with a 2W power dissipation. RoHS compliant and lead-free.
Diodes FZT651TA technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 430mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | 3A |
| Current | 3A |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 175MHz |
| Gain Bandwidth Product | 175MHz |
| Height | 1.65mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 3A |
| Max Frequency | 175MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 175MHz |
| Voltage | 60V |
| DC Rated Voltage | 60V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes FZT651TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
