NPN silicon bipolar junction transistor for surface mount applications. Features a 300V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 30MHz. Housed in a SOT-223 package with a maximum power dissipation of 2W. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-223
Current Rating500mA
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Diodes FZT657TC technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 30MHz |
| Height | 1.65mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| DC Rated Voltage | 300V |
| Weight | 0.000282oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes FZT657TC Datasheet
Download the complete datasheet for Diodes FZT657TC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
