NPN bipolar junction transistor (BJT) for surface mount applications. Features a 70V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 2A. Offers a minimum DC current gain (hFE) of 400 and a transition frequency of 150MHz. Packaged in SOT-223 with a maximum power dissipation of 2W. RoHS compliant and operates within a temperature range of -55°C to 150°C.
Diodes FZT692BTA technical specifications.
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