PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 60V. Offers a low collector-emitter saturation voltage of 600mV and a transition frequency of 140MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 3W. Packaged in TO-261-4 and supplied on cut tape, this RoHS compliant component is ideal for power switching and amplification.
PackageTO-261-4
MountingSurface Mount
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Technical Specifications
Diodes FZT751QTA technical specifications.
General
| Package/Case | TO-261-4 |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 600mV |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes FZT751QTA Datasheet
Download the complete datasheet for Diodes FZT751QTA to view detailed technical specifications.
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