PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-223 surface mount package. Features a 60V collector-emitter breakdown voltage, 3A continuous collector current, and a 140MHz transition frequency. Offers a minimum hFE of 100 and a maximum power dissipation of 3W. Operates from -55°C to 150°C and is RoHS compliant.
Frequency140MHz
PackageSOT-223
Voltage60V
Current3A
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Technical Specifications
Diodes FZT751TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-450mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
600mV
Continuous Collector Current
-3A
Current
3A
Current Rating
-3A
Emitter Base Voltage (VEBO)
5V
Frequency
140MHz
Gain Bandwidth Product
140MHz
Height
1.65mm
hFE Min
100
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
60V
Max Collector Current
3A
Max Frequency
140MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
140MHz
Voltage
60V
DC Rated Voltage
-60V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT751TA Datasheet
Download the complete datasheet for Diodes FZT751TA to view detailed technical specifications.
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