NPN silicon bipolar junction transistor featuring a 150V collector-emitter breakdown voltage and a continuous collector current of 1A. This surface-mount device offers a maximum power dissipation of 2W and a transition frequency of 30MHz. The transistor is housed in a SOT-223 package and operates within a temperature range of -55°C to 150°C. It is lead-free, RoHS compliant, and REACH SVHC compliant.
Frequency30MHz
PackageSOT-223
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Diodes FZT755TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
150V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Frequency
30MHz
Gain Bandwidth Product
30MHz
Height
1.65mm
hFE Min
50
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
150V
Max Collector Current
1A
Max Frequency
30MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
30MHz
DC Rated Voltage
-150V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT755TA Datasheet
Download the complete datasheet for Diodes FZT755TA to view detailed technical specifications.
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