PNP Silicon Bipolar Junction Transistor, surface mount in SOT-223 package. Features 300V Collector Emitter Breakdown Voltage (VCEO), 300V Collector Base Voltage (VCBO), and 500mA Max Collector Current (IC). Operates with a 30MHz Transition Frequency and -500mV Collector Emitter Saturation Voltage. Rated for 2W Power Dissipation and a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
Frequency30MHz
PackageSOT-223
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Diodes FZT757TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
300V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
500mV
Current Rating
-500mA
Emitter Base Voltage (VEBO)
-5V
Frequency
30MHz
Gain Bandwidth Product
30MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
300V
Max Collector Current
500mA
Max Frequency
30MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
30MHz
DC Rated Voltage
-300V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT757TA Datasheet
Download the complete datasheet for Diodes FZT757TA to view detailed technical specifications.
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