
PNP Silicon Bipolar Junction Transistor, surface mount in SOT-223 package. Features 300V Collector Emitter Breakdown Voltage (VCEO), 300V Collector Base Voltage (VCBO), and 500mA Max Collector Current (IC). Operates with a 30MHz Transition Frequency and -500mV Collector Emitter Saturation Voltage. Rated for 2W Power Dissipation and a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
Diodes FZT757TA technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Frequency | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| DC Rated Voltage | -300V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes FZT757TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
