PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 400V Collector-Emitter Breakdown Voltage (VCEO) and a 400V Collector Base Voltage (VCBO). Offers a maximum collector current of 500mA and a transition frequency of 50MHz. Packaged in a SOT-223 case, this component supports a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C. RoHS and REACH SVHC compliant.
Frequency50MHz
PackageSOT-223
Current Rating-500mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes FZT758TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
400V
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
400V
Collector-emitter Voltage-Max
500mV
Current Rating
-500mA
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
400V
Max Collector Current
500mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
-400V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT758TA Datasheet
Download the complete datasheet for Diodes FZT758TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
