The FZT789A is a PNP bipolar junction transistor with a collector emitter breakdown voltage of 25V and a maximum operating temperature of 150°C. It is packaged in a SOT-223 case and is available on cut tape. The transistor has a maximum power dissipation of 2W and a transition frequency of 100MHz. The FZT789A is RoHS compliant and not Reach SVHC compliant. It is suitable for use in high-temperature applications.
PackageSOT-223
PolarityPNP
Power2mW
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Technical Specifications
Diodes FZT789A technical specifications.
General
| Package/Case | SOT-223 |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2W |
| Packaging | Cut Tape |
| Polarity | PNP |
| Power Dissipation | 2mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes FZT789A Datasheet
Download the complete datasheet for Diodes FZT789A to view detailed technical specifications.
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