PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -3A. Offers a maximum power dissipation of 2W and a transition frequency of 100MHz. Packaged in a SOT-223 case, this lead-free component operates from -55°C to 150°C.
Frequency100MHz
PackageSOT-223
Current Rating-2A
MountingSurface Mount
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Technical Specifications
Diodes FZT790ATA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-400mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Continuous Collector Current
-3A
Current Rating
-2A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
40V
Max Collector Current
3A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-40V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT790ATA Datasheet
Download the complete datasheet for Diodes FZT790ATA to view detailed technical specifications.
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