PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a 70V collector-emitter breakdown voltage and a maximum collector current of 2A. Offers a typical collector-emitter saturation voltage of -300mV and a gain bandwidth product of 160MHz. Packaged in a SOT-223 case, this component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W.
Frequency160MHz
PackageSOT-223
Current Rating-2A
MountingSurface Mount
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Technical Specifications
Diodes FZT792ATA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
75V
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
-300mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
500mV
Current Rating
-2A
Emitter Base Voltage (VEBO)
5V
Frequency
160MHz
Gain Bandwidth Product
160MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
70V
Max Collector Current
2A
Max Frequency
160MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
160MHz
DC Rated Voltage
-70V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT792ATA Datasheet
Download the complete datasheet for Diodes FZT792ATA to view detailed technical specifications.
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