PNP Silicon Bipolar Junction Transistor, surface mount, SOT-223 package. Features 140V Collector-Emitter Breakdown Voltage, 140V Collector-Emitter Voltage, and 140V Collector Base Voltage. Offers continuous collector current of -500mA and a transition frequency of 100MHz. Maximum power dissipation is 2W, with operating temperatures from -55°C to 150°C. RoHS and REACH SVHC compliant.
Frequency100MHz
PackageSOT-223
Voltage150V
Current Rating-500mA
Quick Jump:
Technical Specifications
Diodes FZT795ATA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
140V
Collector Emitter Breakdown Voltage
140V
Collector Emitter Saturation Voltage
-300mV
Collector Emitter Voltage (VCEO)
140V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-500mA
Current Rating
-500mA
Emitter Base Voltage (VEBO)
-5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
140V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
100MHz
Voltage
150V
DC Rated Voltage
-140V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT795ATA Datasheet
Download the complete datasheet for Diodes FZT795ATA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
