PNP bipolar junction transistor featuring a 200V collector-emitter breakdown voltage and a continuous collector current of 500mA. This silicon transistor offers a maximum power dissipation of 2W and a transition frequency of 100MHz. Packaged in a SOT-223 surface-mount case, it operates within a temperature range of -55°C to 150°C.
PackageSOT-223
Current Rating-500mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes FZT796ATC technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | -200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -500mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -200V |
| Weight | 0.000282oz |
| Width | 3.7mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes FZT796ATC Datasheet
Download the complete datasheet for Diodes FZT796ATC to view detailed technical specifications.
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