NPN Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 7A continuous collector current and 30V collector-emitter breakdown voltage. Offers a 100MHz transition frequency and a minimum hFE of 100. Packaged in SOT-223 with 3W power dissipation. RoHS compliant and lead-free.
Frequency100MHz
PackageSOT-223
Current Rating7A
MountingSurface Mount
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Technical Specifications
Diodes FZT849TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
350mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
350mV
Continuous Collector Current
7A
Current Rating
7A
Emitter Base Voltage (VEBO)
6V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.65mm
hFE Min
100
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
30V
Max Collector Current
7A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
100MHz
DC Rated Voltage
30V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT849TA Datasheet
Download the complete datasheet for Diodes FZT849TA to view detailed technical specifications.
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