NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 100V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 6A. Offers a maximum power dissipation of 3W and a transition frequency of 130MHz. Packaged in a SOT-223 case, this 1-element transistor is lead-free and RoHS compliant.
Frequency130MHz
PackageSOT-223
Current Rating6A
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes FZT853TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
200V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
340mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
340mV
Continuous Collector Current
6A
Current Rating
6A
Emitter Base Voltage (VEBO)
6V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
100V
Max Collector Current
6A
Max Frequency
130MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
130MHz
DC Rated Voltage
100V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT853TA Datasheet
Download the complete datasheet for Diodes FZT853TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
