PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 5A. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 120MHz. Packaged in SOT-223 with tape and reel for high-volume assembly. Operates from -55°C to 150°C with 3W power dissipation.
Frequency120MHz
PackageSOT-223
Current Rating-5A
MountingSurface Mount
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Technical Specifications
Diodes FZT951TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
460mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
460mV
Current Rating
-5A
Emitter Base Voltage (VEBO)
6V
Frequency
120MHz
Gain Bandwidth Product
120MHz
Height
1.65mm
hFE Min
100
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
60V
Max Collector Current
5A
Max Frequency
120MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
120MHz
DC Rated Voltage
-60V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT951TA Datasheet
Download the complete datasheet for Diodes FZT951TA to view detailed technical specifications.
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