PNP silicon bipolar junction transistor for surface mount applications. Features a 100V collector-emitter breakdown voltage and a 5A continuous collector current. Offers a maximum power dissipation of 3W and a transition frequency of 120MHz. Packaged in a SOT-223 case, this RoHS compliant component operates from -55°C to 150°C.
Frequency125MHz
PackageSOT-223
Current Rating-5A
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes FZT953TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
140V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-420mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
460mV
Current Rating
-5A
Emitter Base Voltage (VEBO)
6V
Frequency
125MHz
Gain Bandwidth Product
125MHz
Height
1.65mm
hFE Min
100
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
100V
Max Collector Current
5A
Max Frequency
125MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
120MHz
DC Rated Voltage
-100V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT953TA Datasheet
Download the complete datasheet for Diodes FZT953TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
