PNP silicon bipolar junction transistor for surface mount applications. Features a 12V collector-emitter breakdown voltage, 6A continuous collector current, and 80MHz gain bandwidth product. This 1-element transistor offers a maximum power dissipation of 3W and operates within a temperature range of -55°C to 150°C. Packaged in a SOT-223 case, it is lead-free and RoHS compliant.
Frequency80MHz
PackageSOT-223
Current Rating-6A
MountingSurface Mount
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Technical Specifications
Diodes FZT968TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
15V
Collector Emitter Breakdown Voltage
12V
Collector Emitter Saturation Voltage
-360mV
Collector Emitter Voltage (VCEO)
12V
Collector-emitter Voltage-Max
450mV
Continuous Collector Current
-6A
Current Rating
-6A
Emitter Base Voltage (VEBO)
-6V
Frequency
80MHz
Gain Bandwidth Product
80MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
12V
Max Collector Current
6A
Max Frequency
80MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
80MHz
DC Rated Voltage
-12V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes FZT968TA Datasheet
Download the complete datasheet for Diodes FZT968TA to view detailed technical specifications.
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