The HTMN5130SSD-13 is a 2 N-Channel MOSFET with a maximum drain to source voltage of 55V and a continuous drain current of 2.6A. It has a maximum power dissipation of 1.7W and is packaged in a SO-8 package. The device operates over a temperature range of -55°C to 175°C and is RoHS compliant. The MOSFET has an input capacitance of 218.7pF and a fall time of 6.1ns, with a turn-off delay time of 13.5ns and a turn-on delay time of 3ns.
PackageSO
MountingSurface Mount
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Technical Specifications
Diodes HTMN5130SSD-13 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 6.1ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 218.7pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 130mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13.5ns |
| Turn-On Delay Time | 3ns |
Compliance
| RoHS | Compliant |
Datasheet
Diodes HTMN5130SSD-13 Datasheet
Download the complete datasheet for Diodes HTMN5130SSD-13 to view detailed technical specifications.
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