NPN/PNP Silicon Bipolar Junction Transistor (BJT) in a 6-lead SOT-26 plastic package. Features a 40V collector-emitter breakdown voltage and a 200mA maximum collector current. Offers a minimum hFE of 105 and a transition frequency of 250MHz. Operates across a temperature range of -55°C to 150°C with 300mW maximum power dissipation. Surface mountable, lead-free, RoHS, and REACH SVHC compliant.
PackageSOT-26
Current Rating200mA
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Diodes LBN150B01-7 technical specifications.
General
| Package/Case | SOT-26 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 360mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 250MHz |
| Height | 1.1mm |
| hFE Min | 105 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Weight | 0.001058oz |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes LBN150B01-7 Datasheet
Download the complete datasheet for Diodes LBN150B01-7 to view detailed technical specifications.
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