Four-element silicon bridge rectifier diode with a maximum repetitive peak reverse voltage of 1000V and a minimum breakdown voltage of 1000V. Features four terminals with dual terminal position, operating across a temperature range of -55°C to 150°C.
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Technical Specifications
Diodes MB10S-13 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1000 |
| Breakdown Voltage-Min | 1000 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Diodes MB10S-13 Datasheet
Download the complete datasheet for Diodes MB10S-13 to view detailed technical specifications.
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