The MBR30H100CT-E1 is a silicon rectifier diode with a maximum operating temperature of 175 degrees Celsius. It features a single terminal position and a TO-220AB JEDEC package code. The diode has a maximum reverse voltage of 100V and is constructed from silicon. It is available in a 3-pin package type.
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Technical Specifications
Diodes MBR30H100CT-E1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Pin Count | 3 |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Diodes MBR30H100CT-E1 Datasheet
Download the complete datasheet for Diodes MBR30H100CT-E1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.