NPN bipolar junction transistor featuring a 40V collector-emitter breakdown voltage and 0.6A continuous collector current. This single-element silicon transistor is housed in an ultra-small, leadless plastic package with a 3-pin configuration. Designed for high-temperature operation up to 150°C, it offers a compact solution for various electronic applications.
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Technical Specifications
Diodes MMBT2222ALP4-7B technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Diodes MMBT2222ALP4-7B Datasheet
Download the complete datasheet for Diodes MMBT2222ALP4-7B to view detailed technical specifications.
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