NPN silicon bipolar junction transistor for small signal applications. Features a 25V collector-emitter breakdown voltage, 200mA continuous collector current, and a 300MHz transition frequency. Housed in a SOT-23 plastic package for surface mounting, this single-element transistor offers a minimum hFE of 120 and a maximum power dissipation of 300mW. Operates across a wide temperature range from -55°C to 150°C.
Frequency300MHz
PackageSOT-23
Current Rating200mA
MountingSurface Mount
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Technical Specifications
Diodes MMBT4124-7 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 200mA |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 120 |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 25V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes MMBT4124-7 Datasheet
Download the complete datasheet for Diodes MMBT4124-7 to view detailed technical specifications.
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