NPN silicon bipolar junction transistor (BJT) for switching applications, featuring a 25V collector-emitter breakdown voltage and 200mA continuous collector current. This surface-mount device operates with a maximum power dissipation of 300mW and a transition frequency of 300MHz. It is housed in a compact SOT-23 plastic package, designed for automated assembly with gull-wing terminals. Compliant with RoHS and REACH SVHC standards, this component is suitable for automotive applications.
Frequency300MHz
PackageSOT-23
Current Rating200mA
MountingSurface Mount
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Technical Specifications
Diodes MMBT4124-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
200mA
Current Rating
200mA
DC Current Gain-Min (hFE)
60
Emitter Base Voltage (VEBO)
5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
120
JESD-30 Code
R-PDSO-G3
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
25V
Max Collector Current
200mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Moisture Sensitivity Level
1
Mount
Surface Mount
Number of Elements
1
Package Body Material
Plastic
Package Quantity
3000
Package Shape
Rectangular
Packaging
Tape and Reel
Peak Reflow Temperature (Cel)
260°C
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
10s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency
300MHz
DC Rated Voltage
25V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBT4124-7-F Datasheet
Download the complete datasheet for Diodes MMBT4124-7-F to view detailed technical specifications.
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