
PNP silicon bipolar junction transistor in a SOT-23 plastic package for surface mounting. Features a 250MHz transition frequency, 25V collector-emitter breakdown voltage, and a continuous collector current of 200mA. Offers a minimum DC current gain (hFE) of 120 and a maximum power dissipation of 300mW. Operates within a temperature range of -55°C to 150°C.
Diodes MMBT4126-7 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | -200mA |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | -4V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| Height | 1mm |
| hFE Min | 120 |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -25V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes MMBT4126-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
