PNP silicon bipolar junction transistor in a SOT-23 plastic package for surface mounting. Features a 250MHz transition frequency, 25V collector-emitter breakdown voltage, and a continuous collector current of 200mA. Offers a minimum DC current gain (hFE) of 120 and a maximum power dissipation of 300mW. Operates within a temperature range of -55°C to 150°C.
Frequency250MHz
PackageSOT-23
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Diodes MMBT4126-7 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-25V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
-400mV
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
400mV
Continuous Collector Current
-200mA
Current Rating
-200mA
Emitter Base Voltage (VEBO)
-4V
Frequency
250MHz
Gain Bandwidth Product
250MHz
Height
1mm
hFE Min
120
Lead Free
Contains Lead
Length
3.05mm
Max Breakdown Voltage
25V
Max Collector Current
200mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Reach SVHC Compliant
Yes
RoHS Compliant
No
Transition Frequency
250MHz
DC Rated Voltage
-25V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes MMBT4126-7 Datasheet
Download the complete datasheet for Diodes MMBT4126-7 to view detailed technical specifications.
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