NPN silicon bipolar junction transistor for surface mount applications. Features a 40V collector-emitter breakdown voltage, 600mA continuous collector current, and a 250MHz transition frequency. Housed in a compact SOT-23 plastic package, this component offers a minimum hFE of 100 and a maximum power dissipation of 300mW. Operating temperature range spans from -55°C to 150°C, with AEC-Q101 compliance.
Frequency250MHz
PackageSOT-23
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes MMBT4401-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
750mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Continuous Collector Current
600mA
Emitter Base Voltage (VEBO)
6V
Frequency
250MHz
Gain Bandwidth Product
250MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
40V
Max Collector Current
600mA
Max Frequency
250MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
310mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Transition Frequency
250MHz
DC Rated Voltage
40V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBT4401-7-F Datasheet
Download the complete datasheet for Diodes MMBT4401-7-F to view detailed technical specifications.
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