MMBT4401T-7

NPN BJT Transistor, 40V, 600mA, 250MHz, SOT-523

NPN silicon bipolar junction transistor for general-purpose switching and amplification. Features a 40V collector-emitter breakdown voltage and 600mA continuous collector current. Operates with a 250MHz gain bandwidth product and a minimum hFE of 100. Housed in an ultra-small SOT-523 plastic package for surface mounting, with dimensions of 1.6mm length, 0.8mm width, and 0.75mm height. Rated for operation from -55°C to +150°C with a maximum power dissipation of 150mW.

PackageSOT-523

Current Rating600mA

MountingSurface Mount

PolarityNPN

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Technical Specifications

Diodes MMBT4401T-7 technical specifications.

General

Package/Case	SOT-523
Collector Base Voltage (VCBO)	60V
Collector Emitter Breakdown Voltage	40V
Collector-emitter Voltage-Max	750mV
Continuous Collector Current	600mA
Current Rating	600mA
Emitter Base Voltage (VEBO)	6V
Gain Bandwidth Product	250MHz
Height	0.75mm
hFE Min	100
Lead Free	Contains Lead
Length	1.6mm
Max Breakdown Voltage	40V
Max Collector Current	600mA
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	150mW
Mount	Surface Mount
Package Quantity	1
Packaging	Tape and Reel
Polarity	NPN
Radiation Hardening	No
Reach SVHC Compliant	Yes
RoHS Compliant	No
Transition Frequency	250MHz
DC Rated Voltage	40V
Weight	7.1E-05oz
Width	0.8mm