PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 150V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -200mA. Operates with a gain bandwidth product of 300MHz and a maximum power dissipation of 300mW. Packaged in a SOT-23 surface mount plastic package.
Frequency300MHz
PackageSOT-23
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Diodes MMBT5401-7 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
160V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Voltage (VCEO)
150V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-200mA
Current Rating
-200mA
Emitter Base Voltage (VEBO)
5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
60
Lead Free
Contains Lead
Length
3.05mm
Max Breakdown Voltage
150V
Max Collector Current
600mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Reach SVHC Compliant
Yes
RoHS Compliant
No
Transition Frequency
300MHz
DC Rated Voltage
-150V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes MMBT5401-7 Datasheet
Download the complete datasheet for Diodes MMBT5401-7 to view detailed technical specifications.
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