PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 150V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -200mA. Operates with a gain bandwidth product of 300MHz and a maximum power dissipation of 300mW. Packaged in a SOT-23 surface mount plastic package.
Frequency300MHz
PackageSOT-23
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Diodes MMBT5401-7 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -200mA |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 60 |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 600mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 300MHz |
| DC Rated Voltage | -150V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes MMBT5401-7 Datasheet
Download the complete datasheet for Diodes MMBT5401-7 to view detailed technical specifications.
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