NPN bipolar junction transistor (BJT) for small signal applications. Features a 160V collector-emitter breakdown voltage (VCEO) and 200mA continuous collector current (IC). Operates with a maximum power dissipation of 300mW and a transition frequency of 300MHz. Housed in a 3-pin SOT-23 surface-mount plastic package, this lead-free component is RoHS compliant and suitable for automotive applications.
Frequency300MHz
PackageSOT-23
Current Rating200mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes MMBT5551-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
160V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
160V
Collector-emitter Voltage-Max
200mV
Continuous Collector Current
200mA
Current Rating
200mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
80
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
160V
Max Collector Current
600mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Transition Frequency
300MHz
DC Rated Voltage
160V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBT5551-7-F Datasheet
Download the complete datasheet for Diodes MMBT5551-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
