
NPN silicon bipolar junction transistor for surface mount applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 500mA. Offers a high minimum DC current gain (hFE) of 10000 and a low collector-emitter saturation voltage of 1.2V. Packaged in a compact SOT-23 plastic package, this lead-free component operates across a wide temperature range of -55°C to 150°C and is AEC-Q101 qualified.
Diodes MMBT6427-7-F technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 12V |
| Height | 1mm |
| hFE Min | 10000 |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101 |
| DC Rated Voltage | 40V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes MMBT6427-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.