DIODES

MMBTA05-7

Datasheet

Diodes

MMBTA05-7

Name: MMBTA05-7 Diodes
Brand: Diodes
SKU: MMBTA05-7

NPN BJT, 60V, 500mA, 100MHz, SOT-23, SM

NPN silicon bipolar junction transistor for switching applications. Features a 60V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Packaged in a SOT-23 (TO-236-3) surface-mount plastic case with gull-wing terminals. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW.

PackageTO-236-3

Current Rating100mA

MountingSurface Mount

PolarityNPN

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Technical Specifications

Diodes MMBTA05-7 technical specifications.

General

Case Connection	Isolated
Package/Case	TO-236-3
Collector Base Voltage (VCBO)	60V
Collector Emitter Breakdown Voltage	60V
Collector Emitter Saturation Voltage	250mV
Collector-emitter Voltage-Max	250mV
Continuous Collector Current	500mA
Current Rating	100mA
DC Current Gain-Min (hFE)	100
Emitter Base Voltage (VEBO)	4V
Gain Bandwidth Product	100MHz
Height	1mm
hFE Min	100
JESD-30 Code	R-PDSO-G3
Lead Free	Contains Lead
Length	3.05mm
Max Breakdown Voltage	60V
Max Collector Current	500mA
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300mW
Moisture Sensitivity Level	1
Mount	Surface Mount
Number of Elements	1
Package Body Material	Plastic
Package Quantity	1
Package Shape	Rectangular
Packaging	Cut Tape
Polarity	NPN
Reach SVHC Compliant	Yes
RoHS Compliant	No
Surface Mount	Yes
Terminal Finish	Tin
Terminal Form	Gull Wing
Terminal Position	DUAL
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Transition Frequency	100MHz
DC Rated Voltage	60V
Weight	0.00709oz
Width	1.4mm