NPN silicon bipolar junction transistor for switching applications. Features a 60V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Packaged in a SOT-23 (TO-236-3) surface-mount plastic case with gull-wing terminals. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW.
PackageTO-236-3
Current Rating100mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes MMBTA05-7 technical specifications.
General
Case Connection
Isolated
Package/Case
TO-236-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
250mV
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
500mA
Current Rating
100mA
DC Current Gain-Min (hFE)
100
Emitter Base Voltage (VEBO)
4V
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
100
JESD-30 Code
R-PDSO-G3
Lead Free
Contains Lead
Length
3.05mm
Max Breakdown Voltage
60V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Moisture Sensitivity Level
1
Mount
Surface Mount
Number of Elements
1
Package Body Material
Plastic
Package Quantity
1
Package Shape
Rectangular
Packaging
Cut Tape
Polarity
NPN
Reach SVHC Compliant
Yes
RoHS Compliant
No
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency
100MHz
DC Rated Voltage
60V
Weight
0.00709oz
Width
1.4mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes MMBTA05-7 Datasheet
Download the complete datasheet for Diodes MMBTA05-7 to view detailed technical specifications.
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