
NPN bipolar junction transistor in a SOT-23 plastic package, designed for small signal applications. Features an 80V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 500mA. Offers a high minimum DC current gain (hFE) of 10000 and a transition frequency of 125MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 300mW. Surface mountable and supplied on tape and reel.
Diodes MMBTA28-7 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 10000 |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| RoHS Compliant | No |
| Transition Frequency | 125MHz |
| DC Rated Voltage | 80V |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes MMBTA28-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
