PNP Silicon Bipolar Junction Transistor (BJT) in a PLASTIC PACKAGE-3 (TO-236-3) for surface mount applications. Features a 300V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a 500mA Max Collector Current (I(C)). Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW.
PackageTO-236-3
Current Rating-100mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes MMBTA92-7 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | -300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 50MHz |
| Height | 1mm |
| hFE Min | 40 |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -300V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes MMBTA92-7 Datasheet
Download the complete datasheet for Diodes MMBTA92-7 to view detailed technical specifications.
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