PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 300V Collector-Emitter Breakdown Voltage (VCEO) and a 300V Collector Base Voltage (VCBO). Offers a continuous collector current of -200mA and a maximum collector current of 500mA, with a low collector-emitter saturation voltage of -500mV. Operates with a minimum hFE of 40 and a transition frequency of 50MHz. Packaged in a RoHS compliant SOT-23 surface mount plastic package.
Frequency50MHz
PackageSOT-23
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Diodes MMBTA92-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
300V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-200mA
Current Rating
-500mA
Emitter Base Voltage (VEBO)
-5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1mm
hFE Min
40
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
300V
Max Collector Current
500mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Transition Frequency
50MHz
DC Rated Voltage
-300V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBTA92-7-F Datasheet
Download the complete datasheet for Diodes MMBTA92-7-F to view detailed technical specifications.
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