This is a dual-element, surface-mount bipolar junction transistor (BJT) featuring NPN and PNP polarity. It offers a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current of 600mA. The transistor operates with a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Packaged in a SOT-363 plastic case, it is designed for switching applications and is RoHS compliant.
Frequency300MHz
PackageSOT-363
Current Rating600mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes MMDT2227-7-F technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
75V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
1V
Continuous Collector Current
600mA
Current Rating
600mA
DC Current Gain-Min (hFE)
40
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
100
JESD-30 Code
R-PDSO-G6
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
60V
Max Collector Current
600mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Moisture Sensitivity Level
1
Mount
Surface Mount
Number of Elements
2
Package Body Material
Plastic
Package Quantity
3000
Package Shape
Rectangular
Packaging
Tape and Reel
Peak Reflow Temperature (Cel)
260°C
Polarity
NPN, PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Termination
SMD/SMT
Time @ Peak Reflow Temperature-Max (s)
10s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency
200MHz
DC Rated Voltage
40V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMDT2227-7-F Datasheet
Download the complete datasheet for Diodes MMDT2227-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
