Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity in a 2-element configuration. This silicon transistor offers a maximum collector current of 600mA and a collector-emitter breakdown voltage of 60V. With a transition frequency of 200MHz and a gain bandwidth product of 300MHz, it is suitable for high-frequency applications. The device operates within a temperature range of -55°C to 150°C and is housed in a compact SOT-26 plastic package.
Frequency300MHz
PackageSOT-26
Current Rating600mA
MountingSurface Mount
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Technical Specifications
Diodes MMDT2227M-7 technical specifications.
General
| Package/Case | SOT-26 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1.1mm |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.001058oz |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes MMDT2227M-7 Datasheet
Download the complete datasheet for Diodes MMDT2227M-7 to view detailed technical specifications.
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