PNP Silicon Bipolar Junction Transistor, featuring a 60V Collector-Emitter Breakdown Voltage (VCEO) and a 600mA Continuous Collector Current. This dual-element transistor operates with a 200MHz transition frequency and a minimum hFE of 100. Packaged in an ultra-small, 6-lead SOT-363 plastic surface-mount package, it offers a maximum power dissipation of 200mW and operates across a temperature range of -55°C to 150°C.
Frequency200MHz
PackageSOT-363
Current Rating-600mA
MountingSurface Mount
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Technical Specifications
Diodes MMDT2907A-7-F technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-1.6V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1.6V
Continuous Collector Current
-600mA
Current Rating
-600mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
60V
Max Collector Current
600mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-60V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMDT2907A-7-F Datasheet
Download the complete datasheet for Diodes MMDT2907A-7-F to view detailed technical specifications.
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