This surface mount bipolar junction transistor (BJT) is a 2-element NPN/PNP silicon device designed for switching applications. It features a maximum collector current of 200mA and a collector-emitter breakdown voltage of 40V. The transistor operates with a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Packaged in a SOT-363 plastic case, it offers a maximum power dissipation of 200mW and is RoHS compliant.
Frequency300MHz
PackageSOT-363
Current Rating200mA
MountingSurface Mount
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Technical Specifications
Diodes MMDT3946-7-F technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
200mA
Current Rating
200mA
DC Current Gain-Min (hFE)
30
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
100
JESD-30 Code
R-PDSO-G6
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Moisture Sensitivity Level
1
Mount
Surface Mount
Number of Elements
2
Package Body Material
Plastic
Package Quantity
3000
Package Shape
Rectangular
Packaging
Tape and Reel
Peak Reflow Temperature (Cel)
260°C
Polarity
NPN, PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
10s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency
250MHz
DC Rated Voltage
40V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMDT3946-7-F Datasheet
Download the complete datasheet for Diodes MMDT3946-7-F to view detailed technical specifications.
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