MMDT4126-7-F

PNP BJT Transistor, 25V, 200mA, 250MHz, SOT-363

PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -200mA and a collector-emitter breakdown voltage of 25V. Offers a gain bandwidth product of 250MHz and a minimum hFE of 100. Housed in an ultra-small, plastic SOT-363 surface mount package with dimensions of 2.2mm (L) x 1.35mm (W) x 1mm (H). Compliant with RoHS and REACH SVHC standards.

Frequency250MHz

PackageSOT-363

Current Rating-200mA

MountingSurface Mount

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Technical Specifications

Diodes MMDT4126-7-F technical specifications.

General

Package/Case	SOT-363
Collector Base Voltage (VCBO)	-25V
Collector Emitter Breakdown Voltage	25V
Collector Emitter Saturation Voltage	-400mV
Collector-emitter Voltage-Max	400mV
Continuous Collector Current	-200mA
Current Rating	-200mA
Emitter Base Voltage (VEBO)	-4V
Gain Bandwidth Product	250MHz
Height	1mm
hFE Min	100
Lead Free	Lead Free
Length	2.2mm
Max Breakdown Voltage	25V
Max Collector Current	200mA
Max Frequency	250MHz
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Mount	Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	PNP
Radiation Hardening	No
Reach SVHC Compliant	Yes
RoHS Compliant	Yes
Transition Frequency	250MHz
DC Rated Voltage	-25V
Weight	0.000212oz
Width	1.35mm