MMDT4146-7-F

NPN/PNP BJT, 25V, 200mA, 300MHz, SOT-363

Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity in a 2-element configuration. This silicon transistor offers a maximum collector current of 200mA and a collector-emitter breakdown voltage of 25V. With a transition frequency of 250MHz and a gain bandwidth product of 300MHz, it is suitable for high-frequency applications. The ultra-small plastic package (SOT-363) measures 2.2mm in length, 1.35mm in width, and 1mm in height. This RoHS and REACH SVHC compliant component is supplied on tape and reel.

Frequency300MHz

PackageSOT-363

Current Rating200mA

MountingSurface Mount

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Technical Specifications

Diodes MMDT4146-7-F technical specifications.

General

Package/Case	SOT-363
Collector Base Voltage (VCBO)	30V
Collector Emitter Breakdown Voltage	25V
Collector Emitter Saturation Voltage	300mV
Collector-emitter Voltage-Max	300mV
Current Rating	200mA
Emitter Base Voltage (VEBO)	5V
Gain Bandwidth Product	300MHz
Height	1mm
hFE Min	120
Lead Free	Lead Free
Length	2.2mm
Max Breakdown Voltage	25V
Max Collector Current	200mA
Max Frequency	300MHz
Max Power Dissipation	200mW
Mount	Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN, PNP
Radiation Hardening	No
Reach SVHC Compliant	Yes
RoHS Compliant	Yes
Transition Frequency	250MHz
DC Rated Voltage	40V
Weight	0.000212oz
Width	1.35mm