
NPN silicon bipolar junction transistor for surface mount applications. Features a 40V collector-emitter breakdown voltage and 600mA continuous collector current. Operates with a 250MHz transition frequency and offers a minimum hFE of 100. Housed in an ultra-small, 6-pin plastic SOT-363 package, this lead-free component is RoHS compliant.
Diodes MMDT4401-7-F technical specifications.
Download the complete datasheet for Diodes MMDT4401-7-F to view detailed technical specifications.
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