PNP silicon bipolar junction transistor in an ultra-small, surface-mount plastic package. Features a 40V collector-emitter breakdown voltage, 600mA continuous collector current, and a 200MHz transition frequency. Offers a minimum DC current gain (hFE) of 100 and a collector-emitter saturation voltage of -750mV. Operates across a wide temperature range from -55°C to 150°C.
Diodes MMDT4403-7 technical specifications.
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -750mV |
| Collector-emitter Voltage-Max | 750mV |
| Continuous Collector Current | -600mA |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 200MHz |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Contains Lead |
| Length | 2.2mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -40V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes MMDT4403-7 to view detailed technical specifications.
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