PNP Silicon Bipolar Junction Transistor, featuring a 2-element configuration in an ultra-small, 6-lead plastic package (SOT-363). This surface-mount device offers a continuous collector current of -600mA and a collector-emitter breakdown voltage of 40V. It operates with a gain bandwidth product of 200MHz and a maximum power dissipation of 200mW. Designed for lead-free and RoHS compliant applications, it operates across a wide temperature range from -55°C to 150°C.
Frequency200MHz
PackageSOT-363
Current Rating-600mA
MountingSurface Mount
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Technical Specifications
Diodes MMDT4403-7-F technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-750mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Continuous Collector Current
-600mA
Current Rating
-600mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
40V
Max Collector Current
600mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-40V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMDT4403-7-F Datasheet
Download the complete datasheet for Diodes MMDT4403-7-F to view detailed technical specifications.
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